Published June 15, 2015 | Version v1
Journal article

Broadband enhancement of local density of states using silicon-compatible hyperbolic metamaterials

  • 1. Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street Boston, Massachusetts 02215 (United States)
  • 2. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)
  • 3. Division of Materials Science and Engineering, Boston University, 15 Saint Mary's Street, Brookline, Massachusetts 02446 (United States)

Description

Light emitting silicon quantum dots by colloidal synthesis were uniformly spin-coated into a 20 nm-thick film and deposited atop a hyperbolic metamaterial of alternating TiN and SiO2 sub-wavelength layers. Using steady-state and time-resolved photoluminescence spectroscopy as a function of the emission wavelength in partnership with rigorous electromagnetic modeling of dipolar emission, we demonstrate enhanced Local Density of States and coupling to high-k modes in a broad spectral range. These findings provide an alternative approach for the engineering of novel Si-compatible broadband sources that leverage the control of radiative transitions in hyperbolic metamaterials and the flexibility of the widespread Si platform

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
24
Journal Page Range
p. 241105-241105.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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