Published December 2007 | Version v1
Journal article

Physical properties of single crystalline CeNi4.2Mn0.8

  • 1. Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice (Poland)
  • 2. Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznan (Poland)

Description

A single crystal CeNi4.2Mn0.8 was grown by the Czochralski method from a levitating melt. The structural, magnetic, electrical transport and electronic structure properties were examined. X-ray diffraction confirms the hexagonal structure. The f occupancy nf and the coupling Δ between the f level and the conduction states are derived to be about 0.95 and 100 meV, respectively. The X-ray photoemission spectroscopy shows that Ce ions in CeNi4.2Mn0.8 are in the intermediate valance state. The temperature dependence of resistivity exhibits the metallic character of this compound and reveals a small inflection at 136 K. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/crat.200711030

Additional details

Identifiers

Publishing Information

Journal Title
Crystal Research and Technology
Journal Volume
42
Journal Issue
12
Journal Page Range
p. 1348-1351
ISSN
0232-1300
CODEN
CRTEDF

Conference

Title
5. International conference on solid state crystals (ICSSC-5) and 8th Polish conference on crystal growth (PCCG-8)
Dates
20-24 May 2007
Place
Zakopane-Koscielisko (Poland)

Optional Information

Notes
With 6 figs., 12 refs.. SICI: 0232-1300(200712)42:12<1348::AID-CRAT200711030>3.0.TX;2-Y