Direct current and impedance spectroscopic studies on MoO3 modified ZnPc/ITO Schottky diodes

We use experimental results of direct current and low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor ZnPc. The experimental results demonstrate an increase in current and holes mobility by the introduction of a thin MoO3 film at the ITO/ZnPc interface. This significantly improves the device performance. The improvement is explained in terms of the reduction in the effective barrier for charge transfer from ZnPc to ITO. -- Research Highlights: → Dc and low signal impedance spectroscopic study. → The experimental results demonstrate an increase in current and holes mobility by the introduction of a thin MoO3 film at the ITO/ZnPc interface. → The improvement is explained in terms of the reduction in the effective barrier for charge transfer from ZnPc to ITO. → At positive bias values below 1 V, the conduction is Ohmic and space charge limited while at values above 1 V the conduction process can be best explained by Schottky effect. → Using IS results dielectric constant and holes mobilities were found which are important factors in the electrical characterization of any device.