Published February 2003 | Version v1
Journal article

Effect of Anisotropic Strain on the Electronic Properties of the Pressure Induced Superconductor CePd2Si2

  • 1. DPMC, University of Geneva, Geneva (Switzerland)

Description

Taking advantage of the additional uniaxial stress present in the non-ideal pressure conditions of a Bridgman anvil cell, we demonstrate the high sensitivity of the physical properties in CePd2Si2 to anisotropic strain. Stress applied along the c-axis extends the phase diagram to higher pressures and enhances the superconducting phase emerging around the magnetic instability, with a 40% increase in the maximum superconducting temperature and a doubled pressure range. We discuss first the possible effect of anisotropic strain on the physics described only by spin fluctuations. However, the pressure dependence of the resistivity suggests a more complex ground state around the quantum critical point, where the Kondo and excited crystal field energies interact. (author)

Additional details

Publishing Information

Journal Title
Acta Physica Polonica. Series B
Journal Volume
B34
Journal Issue
2,Part one
Journal Page Range
p. 459-462
ISSN
0587-4254

Conference

Title
International Conference on Strongly Correlated Electron System (SCES'2002) - Part 1
Dates
10-13 Jul 2002
Place
Cracow (Poland)

Optional Information

Notes
3 refs., 2 figs.