Linear scaling quantum transport methodologies
Creators
- 1. Varian Medical Systems Finland, Paciuksenkatu 21, FI-00270 Helsinki (Finland)
- 2. School of Mathematics and Physics, Bohai University, Jinzhou (China)
- 3. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona (Spain)
- 4. Departamento de Física y Química Teórica, Facultad de Química, UNAM, Mexico City 04510 (Mexico)
- 5. Department of Chemistry, Technische Universität München, 85748 Garching (Germany)
- 6. Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden (Germany)
- 7. ICREA – Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona (Spain)
Description
In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. The simulation of quantum transport in realistic models calls for the development of linear scaling, or order-, numerical methods, which then become enabling tools for guiding experimental research and for supporting the interpretation of measurements. In this review, we describe and compare different order- computational methods that have been developed during the past twenty years, and which have been used extensively to explore quantum transport phenomena in disordered media. We place particular focus on the zero-frequency electrical conductivities derived within the Kubo–Greenwoodand Kubo–Streda formalisms, and illustrate the capabilities of these methods to tackle the quasi-ballistic, diffusive, and localization regimes of quantum transport in the noninteracting limit. The fundamental issue of computational cost versus accuracy of various proposed numerical schemes is addressed in depth. We then illustrate the usefulness of these methods with various examples of transport in disordered materials, such as polycrystalline and defected graphene models, 3D metals and Dirac semimetals, carbon nanotubes, and organic semiconductors. Finally, we extend the review to the study of spin dynamics and topological transport, for which efficient approaches for calculating charge, spin, and valley Hall conductivities are described.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physrep.2020.12.001Additional details
Identifiers
- DOI
- 10.1016/j.physrep.2020.12.001;
- PII
- S0370157320304245;
Publishing Information
- Journal Title
- Physics Reports
- Journal Volume
- 903
- Journal Page Range
- p. 1-69
- ISSN
- 0370-1573
- CODEN
- PRPLCM
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54083577
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CARBON NANOTUBES; COMPUTERIZED SIMULATION; ELECTRIC CONDUCTIVITY; GRAPHENE; METALS; ORGANIC SEMICONDUCTORS; POLYCRYSTALS; POLYNOMIALS; SEMIMETALS; SPIN; THERMODYNAMIC PROPERTIES; TIME DEPENDENCE; TOPOLOGY
- Descriptors DEC
- ANGULAR MOMENTUM; CARBON; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; FUNCTIONS; MATERIALS; MATHEMATICS; NANOSTRUCTURES; NANOTUBES; NONMETALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SIMULATION
Optional Information
- Copyright
- Copyright (c) 2020 The Author(s). Published by Elsevier B.V.