The Faraday effect approach to a study of AIVBVI narrow-gap semiconductor band structure

The magnetooptical Faraday effect in the transparency range ℎω ≤ Eg of Pb1-xSnxTe (0 ≤ x ≤ 0.23) and PbSe single crystals with carrier concentrations from 2 x 1016 to 2 x 1018 cm-3 is investigated under applied magnetic fields up to 6 T over the temperature range T = 4.2 to 300 K. g-factors and effective masses of carriers are determined within the range of T = 4.2 to 300 K. It is shown that the experimental results with or without quantization of the energy spectrum may be interpreted only under condition ?gc? > ?gv?, where gc and gv are the g-factors of electrons and holes. Some new values of Dimmock six-band model parameters gt± and gl± are obtained taking into account ?gc? > ?gv? condition. (author)