Published August 2023 | Version v1
Journal article

Suppressing ion migration of mixed-halide perovskite quantum dots for high efficiency pure-red light-emitting diodes

  • 1. Shunde Innovation School, University of Science and Technology Beijing, Foshan, Guangdong, 528399 (China)
  • 2. Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083 (China)
  • 3. Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun, 130012 (China)
  • 4. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China)
  • 5. Department of Physics and Astronomy and Photon Science Institute, University of Manchester, Manchester, M13 9PL (United Kingdom)
  • 6. Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077 (China)

Description

Perovskite-based light-emitting diodes (PeLEDs) with a mixed halide composition can be used to obtain the "pure red" emission, i.e., in the 620-650 nm range, required for high-definition displays. However, fast halide ion migration induces phase separation in these materials under electric fields, resulting in poor spectral stability and low efficiency. Herein, a method for producing mixed halide CsPbI3xBrx quantum dots (QDs) is reported in which ion migration is suppressed. The mixed halide composition is first achieved by anion exchange between CsPbI3 QDs and hydrobromic acid (HBr), during that the bromine ions efficiently passivate the iodine vacancies of the QDs. The original oleic acid ligands are then exchanged for 1-dodecanethiol (1-DT), which suppresses halide ion migration via the strong binding of the sulfhydryl group with the QD surface. PeLEDs based on these QDs exhibit a pure-red electroluminescence (EL) peak at 637 nm, a maximum external quantum efficiency (EQE) of 21.8% with an average value of 20.4%, a peak luminance of 2653 cd m2, and low EQE decease with increasing luminance. The EL spectrum of these devices is stable even at 6.7 V and they have an EQE half-life of 70 min at an initial luminance of 150 cd m2. (© 2023 Wiley-VCH GmbH)

Availability note (English)

Available from: http://dx.doi.org/10.1002/adfm.202300116

Additional details

Identifiers

Publishing Information

Journal Title
Advanced Functional Materials (Internet)
Journal Volume
33
Journal Issue
32
Journal Page Range
p. 1-9
ISSN
1616-3028
CODEN
AFMDC6

Optional Information

Notes
AID: 2300116