Published November 1987
| Version v1
Miscellaneous
Phase transformations in ion implanted Si studied by Rutherford backscattering and complementary techniques
Creators
- 1. Royal Melbourne Inst. of Tech. (Australia). Microelectronics Technology Centre
Description
We have observed an amorphous to polycrystalline Si transformation with concurrent Sn redistribution in Sn-implanted Si at temperatures well below those at which solid phase epitaxial growth, or random crystallization, is observed to take place in undoped Si. The process is extremely rapid and characterised by a strong dependence on Sn concentration and temperature. We propose that this is mediated by molten Sn-rich precipitates in the amorphous Si
Additional details
Publishing Information
- Publisher
- AINSE.
- Imprint Place
- Lucas Heights (Australia)
- Imprint Title
- Fifth Australian conference on nuclear techniques of analysis : proceedings
- Imprint Pagination
- 266 p.
- Journal Page Range
- p. 114-116.
- Report number
- INIS-mf--11495
Conference
- Title
- 5. Australian conference on nuclear techniques of analysis.
- Dates
- 4-6 Nov 1987.
- Place
- Lucas Heights (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 20059696
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ION IMPLANTATION; RUTHERFORD SCATTERING; SILICON; TIN
- Descriptors DEC
- ELASTIC SCATTERING; ELEMENTS; METALS; SCATTERING; SEMIMETALS