Published November 1, 1984
| Version v1
Journal article
Free-carrier optical absorption induced by dislocation scattering mechanisms in III-V compounds
Description
The influence of dislocations on the free carrier absorption in the case of III-V compounds are determined theoretically taking into account the piezoelectric scattering potential associated with dislocations and the eventual existence of a deep flat band. Then the possibility to observe such effects is discussed and these calculations are illustrated by experimental results obtained on InSb. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi B
- Journal Volume
- 126
- Journal Issue
- 1
- Series
- Phys. Status Solidi B.
- Journal Page Range
- 351-359
- ISSN
- 0370-1972
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 16045034
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; ANTIMONIDES; BAND THEORY; CARRIER DENSITY; CHARGE CARRIERS; DISLOCATIONS; ENERGY LEVELS; INDIUM COMPOUNDS; OPACITY; SCATTERING
- Descriptors DEC
- ANTIMONY COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LINE DEFECTS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES