Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon
Creators
- 1. Oak Ridge National Lab., TN
Description
Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As+ ions to a dose of approx. 1 x 1016 ions/cm2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.
Files
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Additional details
Additional titles
- Augmented title (English)
- 100keV As"+
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- CONF-781113--24
Conference
- Title
- 5. conference on application of small accelerators.
- Dates
- 6 - 8 Nov 1978.
- Place
- Denton, TX, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 10481785
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ARSENIC; BACKSCATTERING; CRYSTAL LATTICES; DOPED MATERIALS; ELECTRON BEAMS; FABRICATION; ION IMPLANTATION; LASERS; SILICON; SILICON ARSENIDES
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; LEPTON BEAMS; PARTICLE BEAMS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS