Published 1990 | Version v1
Book Metadata-only

MBE growth and characterization of small band gap HgTe-HgCdTe superlattices

Creators

  • 1. North Carolina State Univ., Raleigh, NC (USA). Dept. of Physics

Description

A series of modulation-doped small-band-gap Hg Te-Hg1-xCdxTe superlattices (SLs) have been grown by photoassisted MBE. N-type or p-type conductivity was obtained in the modulation-doped samples by incorporating either In or As dopant atoms in the barrier layers, respectively. The electrical and optical properties that these new multilayered quantum well structures display are discussed

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-049-6
Imprint Title
Properties of II-VI semiconductors: Bulk crystals, epitaxial films, quantum well structures, and dilute magnetic systems
Imprint Pagination
516 p.
Journal Page Range
p. 363-369.

Conference

Title
Materials Research Society fall meeting.
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22054822
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CADMIUM TELLURIDES; CRYSTAL DOPING; EPITAXY; MERCURY TELLURIDES; MOLECULAR BEAMS; OPTICAL PROPERTIES; SUPERLATTICES
Descriptors DEC
BEAMS; CADMIUM COMPOUNDS; CHALCOGENIDES; MERCURY COMPOUNDS; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS

Optional Information

Secondary number(s)
CONF-891119--.