Published April 1980
| Version v1
Journal article
Charge-carrier recombination on irradiation-induced point defects in germanium
- 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
Description
Recombination and adhesion processes conditioned by irradiation-induced point defects in Ge < P >, Ge < Sb > and Ge < Bi > have been comparatively studied. Centers responsible for these processes in germanium irradiated with γ-rays have been determined. It is ascertained that defects comprising donors of the fifth group and conditioning the change of electric parameters of such material under irradiation do not significantly effect recombination and charge-carrier adhesion processes
Additional details
Additional titles
- Original title (Russian)
- Рекомбинация носителей заряда на точечных радиационных дефектах в германии
- Augmented title (English)
- Dope: P, Sb, Bi
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 14
- Journal Issue
- 4
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 715-721
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 11566784
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARRIER DENSITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; GERMANIUM; HALL EFFECT; LIFETIME; LOW TEMPERATURE; MEDIUM TEMPERATURE; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION DOSES; RECOMBINATION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; METALS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- For English translation see the journal Soviet Physics - Semiconductors (USA).