Correlation among magneto-, electrical- and thermal-transport properties in SrRuO films
Creators
- 1. Hebei Key Lab of Optic-Electronic Information and Materials, The College of Physics Science and Technology, Hebei University, 071002, Baoding (China)
- 2. Zunyi Normal Coll, Sch Phys & Elect Sci, 563006, Zunyi (China)
Description
The magneto-, electrical- and thermal-transport properties of SrRuO (SRO) films have been investigated. The magnetization (M), relative resistivity (Δρ) and relative Seebeck (ΔS) near T follow a scaling law, M ~ (T-T), Δρ ~ (T-T) and ΔS ~ (T-T), respectively. The values α = 0.394, β = 0.401 and γ = 0.421 for the (001)-SRO thin films are well fitted with mean-field critical exponents. While critical exponent α = 0.365, β = 0.357 and γ = 0.363 for the (111)-SRO thin films belong to Heisenberg ferromagnetic behavior. A T temperature dependence of resistivity below 30 K corresponds to a Fermi-liquid state. In the Fermi-liquid regime, the MR(%) =|ρ(H)−ρ(0)|/ρ(0) × 100% and MS(%) =|S(H)−S(0)|/S(0) × 100% are quadratic at low field and almost linear for large field without saturation until 70 kOe. Furthermore, dM/dT, dρ/dT and dS/dT show a linear relationship, indicating the intrinsic electrical-, thermal- and magneto-transport properties are coupled.
Additional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing (Print)
- Journal Volume
- 127
- Journal Issue
- 6
- Journal Page Range
- vp.
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 52086211
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CORRELATIONS; FERMI GAS; MAGNETIZATION; MEAN-FIELD THEORY; RUTHENIUM OXIDES; SCALING LAWS; STRONTIUM OXIDES; TEMPERATURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; FILMS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; RUTHENIUM COMPOUNDS; STRONTIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- AID: 409