Published May 2016
| Version v1
Journal article
Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol
Creators
- 1. Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
- 2. University of Warsaw, Biological and Chemical Research Centre, Al. Zwirki i Wigury 101, 02-089 Warsaw (Poland)
- 3. A. Chełkowski Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice (Poland)
Description
The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force microscopy mode and X-ray photoelectron spectroscopy. The chemical treatment of 10 mM ODT-C2H5OH has been applied to the passivation of a type-II superlattice InAs/GaSb photodetector. The electrical measurements indicate that the current density was reduced by one order of magnitude as compared to an unpassivated photodetector.
Additional details
Identifiers
- DOI
- 10.1063/1.4949754;
Publishing Information
- Journal Title
- AIP Advances
- Journal Volume
- 6
- Journal Issue
- 5
- Journal Page Range
- p. 055206-055206.7
- ISSN
- 2158-3226
- CODEN
- AAIDBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48057895
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; COMPARATIVE EVALUATIONS; CURRENT DENSITY; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; OXIDATION; PASSIVATION; PHOTODETECTORS; SUPERLATTICES; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL REACTIONS; ELECTRON SPECTROSCOPY; EVALUATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; SPECTROSCOPY
Optional Information
- Notes
- (c) 2016 Author(s)