Physical properties of In2O3 thin films prepared at various oxygen partial pressures

Polycrystalline cubic In2O3 thin films were deposited on the normal glass substrates by activated reactive evaporation method and systematically investigated the influence of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 x 10-3 mbar were nearly stoichiometric. The films formed at an oxygen partial pressure of 2 x 10-3 mbar exhibited the electrical resistivity of 8.2 x 10-4 Ω cm, optical transmittance of 87% and the optical band gap of 3.62 eV. Two distinct emission peaks in the photoluminescence spectrum were observed at 415 and 440 nm in the visible region of the solar spectrum.