Published May 1987
| Version v1
Journal article
Impurity doping in semiconductors using high-energy electron bombardment
- 1. Government Industrial Research Inst., Nagoya (Japan)
Description
Published in summary form only
Additional details
Publishing Information
- Journal Title
- Shinku
- Journal Volume
- 30
- Journal Issue
- 5
- Series
- Shinku.
- Journal Page Range
- 335-338
- ISSN
- 0559-8516
- CODEN
- SHINA
Conference
- Title
- 27. vacuum symposium.
- Dates
- 12-14 Nov 1986.
- Place
- Osaka (Japan).
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 19006682
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; CRYSTAL DOPING; DEPTH; ELECTRON BEAMS; GERMANIUM 74; IMPURITIES; IRRADIATION; SEMICONDUCTOR MATERIALS; SILICON 28; SURFACES
- Descriptors DEC
- BEAMS; DIMENSIONS; ELECTRON SPECTROSCOPY; EVEN-EVEN NUCLEI; GERMANIUM ISOTOPES; INTERMEDIATE MASS NUCLEI; ISOTOPES; LEPTON BEAMS; LIGHT NUCLEI; MATERIALS; NUCLEI; PARTICLE BEAMS; SILICON ISOTOPES; SPECTROSCOPY; STABLE ISOTOPES