Space charge in indium arsenide MIS structures

The authors investigate the accumulation of space charge in and the change in the electrophysical properties of InAs-MIS structures under field effects and under the effect of x-ray irradiation. The results show that under field effects, injection-accumulation of space charge occurs in the subgate anodic oxide on InAs, owing to the trapped nonequilibrium electrons and holes in the insulator. MIS structures with silicon dioxide do not manifest an injection instability. X-ray irradiation does not change the charge state of InAs MIS structures with anodic oxide. When silicon dioxide is employed as a subgate insulator, only positive space charge accumulates under irradiation, and this charge is efficiently annealed at 100-2000C