Published June 25, 2008 | Version v1
Journal article

Silica-sandwiched Au nanoparticle arrays by a soft PE-CVD/RF sputtering approach

  • 1. ISTM-CNR and INSTM, Department of Chemistry, Padova University, Via Marzolo, 1-35131 Padova (Italy)
  • 2. Department of Chemistry, Padova University and INSTM, Via Marzolo, 1-35131 Padova (Italy)

Description

This work is focused on the development of an innovative synthetic route to SiO2-sandwiched Au nanoparticle arrays. The adopted strategy consists of: (i) the radio frequency sputtering of gold on thermally oxidized Si(100) and silica substrates from Ar plasmas; (ii) the plasma enhanced chemical vapor deposition of a SiO2 overlayer using tetramethoxysilane as precursor from Ar-O2 plasmas. A common feature of both preparative stages is the use of very soft processing conditions at temperatures close to room temperature, in order to tailor the Au nanoparticle morphology and to preserve it upon SiO2 coverage. In situ monitoring of gold deposition was accomplished by means of laser reflection interferometry. Valuable information on the system morphology before and after SiO2 coverage was provided by field emission-scanning electron microscopy for samples with different Au content. Additional important information on the system chemical composition, structure and optical response was gained by the combined use of x-ray photoelectron spectroscopy, glancing incidence x-ray diffraction and UV-visible absorption spectroscopy. The results obtained highlight the formation of high-purity SiO2/Au/SiO2-sandwiched stacks, in which the gold content and distribution, as well as the nanoparticle morphology, could be tailored by the sole variation of the sputtering time, without any further ex situ treatment

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/19/25/255602

Additional details

Identifiers

DOI
10.1088/0957-4484/19/25/255602;
PII
S0957-4484(08)74964-X;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
19
Journal Issue
25
Journal Page Range
[8 p.]
ISSN
0957-4484