Published January 1985
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Preliminary measurements of gamma ray effects on characteristics of broad-band GaAs field-effect transistor preamplifiers
Description
The effect of gamma radiation on electrical characteristics of cryogenically cooled broad-band low-noise microwave preamplifiers has been preliminarily evaluated. The change in the gain and noise figure of a 1-2 GHz preamplifier using GaAs microwave transistors was determined at gamma doses between 105 rad to 5 /times/ 108 rad. The gain and noise figure was measured at ambient temperatures of 300 K and 80 K. 8 refs., 2 figs
Availability note (English)
Available from NTIS, PC A02/MF A01 as TI88008417.
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Additional details
Publishing Information
- Imprint Pagination
- 8 p.
- Report number
- LBL--21546
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19092982
- Subject category
- S42: ENGINEERING; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ELECTRICAL PROPERTIES; FIELD EFFECT TRANSISTORS; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; GAMMA RADIATION; MICROWAVE AMPLIFIERS; RADIATION EFFECTS
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; IONIZING RADIATIONS; MICROWAVE EQUIPMENT; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS