Published November 15, 1993 | Version v1
Journal article

Monolayer Sm films on Ta and Cu substrates

  • 1. Physics Department, New York University, 4 Washington Place, New York, New York 10003 (United States)
  • 2. Institut fuer Physik, University of Augsburg, Memminger Strasse 6, 86159 Augsburg (Germany)
  • 3. Physics Department, Hunter College of The City University of New York, 695 Park Avenue, New York, New York 10021 (United States)

Description

We have studied the electronic properties of ultrathin layers of Sm on Ta and Cu substrates using valence-band and resonant photoemission. The average formal chemical valence of Sm on Ta increases from below 2.4 at low coverage to the value measured from bulk Sm at higher coverage, while the valence of Sm on Cu is 3 at low coverage and decreases abruptly to the same value measured for Ta substrates at higher coverage. These changes in electronic properties reflect interlayer and intralayer interactions in these films, particularly the weak Sm-Ta and strong Sm-Cu interactions

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
48
Journal Issue
20
Journal Page Range
p. 15289-15296.
ISSN
0163-1829
CODEN
PRBMDO

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25021180
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHEMICAL STATE; COPPER; ELECTRONIC STRUCTURE; FILMS; INTERATOMIC FORCES; LAYERS; PHOTOEMISSION; SAMARIUM; SUBSTRATES; TANTALUM; VALENCE
Descriptors DEC
ELEMENTS; EMISSION; METALS; RARE EARTHS; SECONDARY EMISSION; TRANSITION ELEMENTS