Published November 15, 1993
| Version v1
Journal article
Monolayer Sm films on Ta and Cu substrates
Creators
- 1. Physics Department, New York University, 4 Washington Place, New York, New York 10003 (United States)
- 2. Institut fuer Physik, University of Augsburg, Memminger Strasse 6, 86159 Augsburg (Germany)
- 3. Physics Department, Hunter College of The City University of New York, 695 Park Avenue, New York, New York 10021 (United States)
Description
We have studied the electronic properties of ultrathin layers of Sm on Ta and Cu substrates using valence-band and resonant photoemission. The average formal chemical valence of Sm on Ta increases from below 2.4 at low coverage to the value measured from bulk Sm at higher coverage, while the valence of Sm on Cu is 3 at low coverage and decreases abruptly to the same value measured for Ta substrates at higher coverage. These changes in electronic properties reflect interlayer and intralayer interactions in these films, particularly the weak Sm-Ta and strong Sm-Cu interactions
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 48
- Journal Issue
- 20
- Journal Page Range
- p. 15289-15296.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25021180
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL STATE; COPPER; ELECTRONIC STRUCTURE; FILMS; INTERATOMIC FORCES; LAYERS; PHOTOEMISSION; SAMARIUM; SUBSTRATES; TANTALUM; VALENCE
- Descriptors DEC
- ELEMENTS; EMISSION; METALS; RARE EARTHS; SECONDARY EMISSION; TRANSITION ELEMENTS