Performance enhancement of amorphous WO3 assisted graphene-based electronic devices: Aspect of surface engineering
Creators
- 1. Department of Energy Systems and Department of Materials Science and Technology, Ajou University, Suwon 16499 (Korea, Republic of)
- 2. Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju 55324 (Korea, Republic of)
- 3. Department of Materials Science and Engineering, Hanbat National University, Daejeon 34158 (Korea, Republic of)
- 4. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419 (Korea, Republic of)
- 5. School of Materials Science and Engineering, Pusan National University, Busan 46241 (Korea, Republic of)
- 6. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University (Korea, Republic of)
Description
Highlights: • Amorphous WO3 intermediate layer was used to protect the graphene surface. • The WO3 was dissolved in a deionized water, and no damage occurred to graphene surface. • The performance enhancement was quantitatively verified via the photodetector. • The surface-protected photodetector recorded a 1.74 times higher photoresponsivity and 4s faster temporal photo response time. After the successful synthesis of graphene using chemical vapor deposition in 2009, the large-area/defect-free transfer method still remains a critical issue for implementing high-performance graphene-based electronic devices. Here, for the first time, we demonstrated a specially prepared water-soluble amorphous WO3 intermediate layer to effectively protect the graphene surface from immediately after its synthesis to transfer and final unit processing. Moreover, using the photodetector to which the proposed protection method was applied, the performance improvement was quantitatively verified. Compared with the control device, the surface-protected photodetector recorded a higher photoresponsivity of 1.74 times and faster temporal photoswitching response time of 4 s or more. The graphene surface protection method using the WO3 intermediate layer allows the reversibility in transfer process and performance enhancement of graphene-based electronic devices.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2021.149763Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2021.149763;
- PII
- S0169433221008394;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 556
- Journal Page Range
- vp.
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54080316
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; ELECTRONIC EQUIPMENT; GRAPHENE; LAYERS; PHOTODETECTORS; SAFETY; TUNGSTATES; TUNGSTEN OXIDES
- Descriptors DEC
- CARBON; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELEMENTS; EQUIPMENT; NONMETALS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2021 Elsevier B.V. All rights reserved.