Published March 1, 2021 | Version v1
Journal article

Effect of laser parameters on ultra-short laser processing of SiC

  • 1. Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee blvd., 1784 Sofia (Bulgaria)
  • 2. Belgian Ceramic Research Center, Mons (Belgium)
  • 3. Faculty of Physics, St. Kliment Ohridski University of Sofia, 5 James Bourchier blvd., Sofia (Bulgaria)
  • 4. Faculty of Industrial Engineering, Tribology Center, Technical University – Sofia, 8 Kl. Ohridski blvd., 1000 Sofia (Bulgaria)

Description

Crystalline silicon carbide (SiC) is a very attractive material in the fields of microelectronics, MEMS and biomedicine mainly due to its chemical inertness and mechanical strength. It is used for SiC MEM sensors, micro motors and resonators [1]. In the biomedical field, SiC is emerging as a promising material for additional coating of biomaterials due to its other useful properties (hardness, lightness, impermeability and good compatibility). For instance, in combination with bioglass, it is used for bone regeneration and as coating of some metal alloys, as it forms a bone-like layer on the surface upon contact with body fluids [2]. We studied the results of microporous modifications on the SiC surface irradiated by ultrashort laser pulses in view of further biomedical applications. The nanostructures were formed on the surface of a silicon carbide sample by using a regeneratively amplified Ti:sapphire femtosecond laser emitting at 800 nm. The SiC samples were irradiated as the laser light parameters (power, energy and number of applied pulses) were varied and the surface morphological changes were investigated. Modification of the topography of the silicon carbide substrates could substantially improve the bioactivity properties of this material, which, after proper laser parameters optimization, could make its biomedical application even more successful. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1859/1/012015

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1859
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
21. International Conference and School on Quantum Electronics
Dates
21-25 Sep 2020
Place
Sofia (Bulgaria)