Graphene oxide-based flexible metal–insulator–metal capacitors

This work explores the fabrication of graphene oxide (GO)-based metal–insulator–metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ∼4 fF µm−2 measured at 1 MHz and permittivity of ∼6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending. (paper)