Published June 2010 | Version v1
Journal article Metadata-only

High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Creators

  • 1. Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, and Department of Electronic Engineering, Tsinghua University, Beijing 100084 (China)

Description

We report an A1N epi-layer grown on sapphire by plasma-assisted molecular beam epitaxy with a thin interlayer structure. The effects of growth mode on threading dislocations (TDs) and surface morphology are studied. Then an interlayer structure grown under a V/III ratio of 1 is adopted to improve the A1N crystalline quality. By optimizing the thickness of the interlayer, the TD density and surface roughness can be reduced simultaneously. (cross-disciplinary physics and related areas of science and technology)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/27/6/068101

Additional details

Identifiers

DOI
10.1088/0256-307X/27/6/068101;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
27
Journal Issue
6
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45000388
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM NITRIDES; CRYSTAL GROWTH; DISLOCATIONS; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; ROUGHNESS; SAPPHIRE; SUBSTRATES; SURFACES; THIN FILMS
Descriptors DEC
ALUMINIUM COMPOUNDS; CORUNDUM; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EPITAXY; FILMS; LINE DEFECTS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; PNICTIDES; SURFACE PROPERTIES