Electrical activation of B ions implanted in deposited-amorphous Si during solid phase epitaxy

A novel doping technique in solid phase epitaxy of Si is presented, in which impurity ions are implanted in deposited-amorphous films and electrically activated during epitaxial growth of the films. It has been found in boronimplanted samples that the electrical activity is very high at annealing temperatures higher than 6000C and that the ions do not penetrate deeply by the channeling effect nor redistribute by thermal diffusion. An anomalous result that the sheet carrier concentration is higher than the implanted boron dose has also been found and its origin is phenomenologically investigated. (author)