Component intermixing and strain effects in Cd Se/Zn Se quantum dots

The Cd Se/Zn Se structures with quantum dots (QD) were investigated using the photoluminescence and Raman scattering at the resonant band-to-band excitation of Zn Se. The presence of mechanical strain in Zn Se barrier layers and formation of density of states tails for multi stacks was shown. The experimentally observed inhomogeneous broadening of the emission band of quantum dots maintains the existence of fluctuations of the composition. Is has been shown that the change of QD's composition is a factor that determines the shift of Raman peak at the variation of energy excitation within the emission band of QD's. The strain in multi stack structures is inhomogeneous over its thickness and the strain relaxation in top layers of the structure may be due to increase in the number of layers