Published 2008 | Version v1
Journal article

Micro-twin induced structural misalignment in InSb quantum wells

  • 1. Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman (United States)
  • 2. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman (United States)

Description

Structural misalignments in InSb quantum wells (QWs) caused by a micro-twin (MT) defect have been investigated by transmission electron microscopy (TEM). Dark field (DF) TEM images with the 002 reflection of the parent region show the misalignment clearly, in spite of their low image intensity. Equations that relate the width of a MT and some dimensions regarding the misalignment are derived. These equations make it possible to deduce the dimensions by [anti 110]-directional 220 DF-TEM images which have a higher image intensity than 002 DF-TEM images. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200779274

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
5
Journal Issue
9
Journal Page Range
p. 2775-2777
ISSN
1610-1634

Conference

Title
34. International symposium on compound semiconductors (ISCS-2007)
Dates
15-18 Oct 2007
Place
Kyoto (Japan)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
39082803
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALIGNMENT; CRYSTAL DEFECTS; INDIUM ANTIMONIDES; QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; INDIUM COMPOUNDS; MICROSCOPY; NANOSTRUCTURES; PNICTIDES

Optional Information

Notes
With 2 figs., 13 tabs.. SICI: 1610-1634(200807)5:9<2775::AID-PSSC200779274>3.0.TX;2-A