Published April 15, 2014 | Version v1
Journal article

The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC

  • 1. Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)
  • 2. Fuel Performance and Design Department, Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

Description

3C-SiC wafers were irradiated with neutrons of various fluences and at low (200–400 °C) irradiation temperatures. Fourier transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-fitting procedures. Analysis of all data revealed trends in reflectance peak heights as well as in the dielectric parameters. The surface roughness of the irradiated samples was measured by atomic force spectroscopy (AFM) and certain trends could be ascribed to surface roughness.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2013.10.059

Additional details

Identifiers

DOI
10.1016/j.physb.2013.10.059;
PII
S0921-4526(13)00687-X;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
439
Journal Page Range
p. 169-172
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
5. South African conference on photonic materials
Acronym
SACPM 2013
Dates
29 Apr - 3 May 2013
Place
Kariega Game Reserve (South Africa)

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.