Published 2004 | Version v1
Miscellaneous Metadata-only

The influence of deep and high-dose Kr ions implantation on pressure resistivity of manganin sensors

Creators

  • 1. Institute of Atomic Energy, Swierk (Poland)
  • 2. Physics Faculty, Warsaw University of Technology, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004

Additional details

Publishing Information

Imprint Title
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Imprint Pagination
257 p.
Journal Page Range
p. 245

Conference

Title
5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Dates
14-17 Jun 2004
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
36060196
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ALUMINIUM OXIDES; ARGON IONS; ELECTRIC CONDUCTIVITY; FOILS; ION IMPLANTATION; KRYPTON IONS; MANGANATES; PRESSURE DEPENDENCE; PRESSURE GAGES; PRESSURE RANGE MEGA PA 10-100; RADIATION DOSES; SENSITIVITY; SURFACE COATING; XENON IONS
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; DEPOSITION; DOSES; ELECTRICAL PROPERTIES; IONS; MANGANESE COMPOUNDS; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PRESSURE RANGE; PRESSURE RANGE MEGA PA; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
1 ref.