Photoluminescence from carbon and oxygen implanted Si

Silicon produced by float zone, Lopex, or Czochralski growth techniques were ion implanted with various fluences of carbon, oxygen, or both and annealed to examine the substrate and species dependence of the photoluminescence spectra. Other samples implanted with these impurities were annealed and then irradiated with 2.5 MeV electrons to study further the influence of these common substrate trace impurities on radiative defect formation. Results of this study substantiate earlier suggestions that the 0.970 eV luminescence arises from a carbon-dependent center, while the 0.790 eV luminescence arises from an oxygen-dependent center. (author)