Published May 1986 | Version v1
Journal article Metadata-only

Highly intensive ion implantation into semiconductor crystals

Creators

  • 1. Nauchno-Issledovatel'skij Inst. Prikladnykh Fizicheskikh Problem, Minsk. (Byelorussian SSR)

Description

The process of the amorphous layer recrystallisation has been investigated. The amorphous layer was formed at the initial stage of the irradiation during highly intensive ion implantation of silicon crystals under a self-annealing treatment. A model representation of a step-by-step structure modification during highly intensive ion implantation was developed on the basis of the EPR measurements and electron-microscope analysis

Additional details

Additional titles

Original title (Russian)
Высокоинтенсивная ионная имплантация в полупроводниковые кристаллы

Publishing Information

Journal Title
Poverkhn.: Fiz., Khim., Mekh.
Journal Issue
no.5
Series
Poverkhn.: Fiz., Khim., Mekh.
CODEN
PFKMD

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
18011106
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AMORPHOUS STATE; ANNEALING; ARGON IONS; CRYSTAL DEFECTS; CURRENT DENSITY; ION IMPLANTATION; MONOCRYSTALS; RECRYSTALLIZATION; SILICON; THICKNESS; TIME DEPENDENCE
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; ELEMENTS; HEAT TREATMENTS; IONS; SEMIMETALS