Published April 10, 2013 | Version v1
Journal article

Simplified bond-hyperpolarizability model of second-harmonic-generation in Si(111): theory and experiment

  • 1. Center for surface and nanoanalytics (ZONA), Johannes Kepler University, Altenbergerstr. 69, 4040 Linz (Austria)
  • 2. Christian Doppler laboratory for microscopic and spectroscopic material characterization, Johannes Kepler University, Altenbergerstr. 69, 4040 Linz (Austria)

Description

Second-harmonic-generation (SHG) in centrosymmetric material such as Si(111) is usually understood either from the phenomenology theory or more recently using the simplified bond-hyperpolarizability model (SBHM) [G. D. Powell, J. F. Wang, and D. E. Aspnes, Phys. Rev. B 65, 205320/1 (2002)]. Although SBHM is derived from a classical point of view, it has the advantage over the former that it gives especially for lower symmetry systems a clear physical picture and a more efficient explanation of how nonlinearity is generated. In this paper we provide a step-by-step description of the SBHM in Si(111) for the linear and second harmonic case. We present a SHG experiment of Si(111) and show how it can be modelled by summing up the contribution of the fields produced by the anharmonic motion of the charges along the bonds.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/423/1/012046

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
423
Journal Issue
1
Journal Page Range
[9 p.]
ISSN
1742-6596

Conference

Title
2013 international conference on science and engineering in mathematics, chemistry and physics
Acronym
ScieTech 2012
Dates
24-25 Jan 2013
Place
Jakarta (Indonesia)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44119206
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTALS; HARMONIC GENERATION; NONLINEAR PROBLEMS; SILICON; SYMMETRY
Descriptors DEC
ELEMENTS; FREQUENCY MIXING; SEMIMETALS