Published May 2, 2000
| Version v1
Journal article
Study of radiation defects for AlN ceramics under O+ irradiation
Description
The behavior of radiation defects in AlN ceramics under O+ ion irradiation has been studied with in situ luminescence method. The intensity of luminescence emission had close relationship with absorbed dose. The aggregation of F-type defects in AlN has also been confirmed because of the occurrence of 470 nm emission peak. After O+ irradiation, the behavior of F-type defects was investigated by ESR measurement at 77 K. Influence of radiation defects on the characteristics of emission and ESR was discussed
Additional details
Identifiers
- PII
- S0168583X99012148;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 166-167
- Journal Issue
- 1-4
- Journal Page Range
- p. 70-74
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 33049208
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM NITRIDES; ELECTRON SPIN RESONANCE; F CENTERS; ION BEAMS; LUMINESCENCE; OXYGEN IONS; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; BEAMS; CHARGED PARTICLES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EMISSION; IONS; MAGNETIC RESONANCE; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; POINT DEFECTS; RADIATION EFFECTS; RESONANCE; VACANCIES
Optional Information
- Copyright
- Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.