Published July 2015
| Version v1
Journal article
Correlation among heat treatment induced defects and an emission line near 3.31 eV in ZnO nanocrystals
Creators
- 1. AS RU, Institute of Ion Plasma and Laser Technologies, Tashkent (Uzbekistan)
- 2. Quantum-Functional Semiconductor Research Center, Dongguk Univ, Seoul (Korea, Republic of)
Description
The photoluminescence (PL), scanning electron microscope (SEM), atomic force microscope (AFM) and Kelvin probe force microscope (KPFM) measurements of ZnO nanocrystals have been carried out. The measurements reveal that there is a correlation among high temperature annealing induced speck-like defects (dark spots), pits with a relatively lower surface potential and the emission at 3.31 eV (co-called A-line emission) on ZnO nanocrystal surface. The origin of the observations is discussed. (authors)
Additional details
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 17
- Journal Issue
- 4
- Journal Page Range
- p. 234-241
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 47116366
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CORRELATIONS; DEFECTS; HEAT; NANOSTRUCTURES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SURFACE POTENTIAL; TEMPERATURE RANGE 0400-1000 K; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELECTRON MICROSCOPY; EMISSION; ENERGY; HEAT TREATMENTS; LUMINESCENCE; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; POTENTIALS; SURFACE COATING; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Notes
- 30 refs., 4 figs.