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Published March 1, 2020 | Version v1
Journal article Metadata-only

Analysis of the time domain characteristics of tapered semiconductor lasers

Creators

  • 1. National Engineering Center for Optoelectronic Device, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

We use traveling wave coupling theory to investigate the time domain characteristics of tapered semiconductor lasers with DBR gratings. We analyze the influence of the length of second order gratings on the power and spectrum of output light, and optimizing the length of gratings, in order to reduce the mode competition effect in the device, and obtain the high power output light wave with good longitudinal mode characteristics. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/41/3/032305

Additional details

Identifiers

DOI
10.1088/1674-4926/41/3/032305;

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
41
Journal Issue
3
Journal Page Range
[5 p.]
ISSN
1674-4926

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54020587
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
EQUIPMENT; GRATINGS; OPTIMIZATION; SEMICONDUCTOR MATERIALS; SPECTRA; TRAVELLING WAVES
Descriptors DEC
MATERIALS