Published 2005
| Version v1
Journal article
InP growth on c(4 x 4) and (1 x 3) reconstructed GaAsSb(100) surfaces
- 1. Hahn-Meitner-Inst. SE 4, Berlin (Germany)
- 2. Univ. Duisburg/Essen, Halbleitertechnik/Halbleitertechnologie, Duisburg (Germany)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 40
- Journal Issue
- 2
- Journal Page Range
- p. 512
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- Physics since Albert Einstein
- Original Conference Title
- Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein
- Acronym
- 2005 annual conference of the German Physical Society (DPG) during the World year of physics
- Dates
- 4-9 Mar 2005
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 36050980
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANISOTROPY; CRYSTAL GROWTH; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; ELECTRON SPECTRA; EMISSION SPECTRA; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; ORGANOMETALLIC COMPOUNDS; PHOTOELECTRIC EMISSION; PRESSURE RANGE MICRO PA; SEGREGATION; SPECTRAL REFLECTANCE; SUBSTRATES; SURFACES; TEMPERATURE RANGE 1000-4000 K; VAPOR PHASE EPITAXY
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON EMISSION; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; OPTICAL PROPERTIES; ORGANIC COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; PNICTIDES; PRESSURE RANGE; SCATTERING; SPECTRA; TEMPERATURE RANGE