Published December 1, 2017
| Version v1
Journal article
Temperature optimization of the Ti/Al/Ni/Au ohmic contact formation to the AlGaN/GaN heterostructure
Creators
- 1. National Research Nuclear University MEPhI, Moscow (Russian Federation)
- 2. PLANETA-IRMIS, Saint Petersburg (Russian Federation)
Description
This article is devoted to the experimental study of the ohmic contacts based on Ti/Al/Ni/Au metallization to the n+-doped region of the AlGaN / GaN heterostructure. Formed phases are studied at different temperatures. Based on the thermodynamic analysis of possible intermetallic reactions in the contact region, the optimum temperature range was found for the formation of ohmic contacts with a low contact resistance. The optimality of the modeled range is experimentally confirmed. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/938/1/012072Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 938
- Journal Issue
- 1
- Journal Page Range
- [9 p.]
- ISSN
- 1742-6596
Conference
- Title
- 17. Workshop on High Energy Spin Physics
- Acronym
- DSPIN-2017
- Dates
- 11-15 Sep 2017
- Place
- Dubna (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52066192
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM NITRIDES; DOPED MATERIALS; EXPERIMENT RESULTS; GALLIUM NITRIDES; INTERMETALLIC COMPOUNDS; METALLICITY; OPTIMIZATION; TEMPERATURE RANGE; THERMODYNAMICS
- Descriptors DEC
- ALLOYS; ALUMINIUM COMPOUNDS; GALLIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES