Electric properties of n-indium antimonide irradiated by fast electrons

Temperature dependences of specific resistance ρ and the Hall coefficient Rx (4.2 ≤ T ≤ 300 K) of nondoped monocrystalline specimens n-InSb with electron concentrations n=(3-5)x1014 cm-3 irradiated with fast electrons (E=4-8 MeV, Φ ≤ 1.5x1017 cm-2, Trad ≅ 300 K) were investigated. Decrease of electron concentration on irradiation and n-p-conversion were noted for irradiation flux Φ=6.2x106 cm-2. Results obtained during the work are attributed to predominant introduction of defects of acceptor character on n-InSb irradiation (the simplest defects in indium sublattice and their complexes with oxygen atoms)