First-principles calculations of the structural and electronic properties of monolayer and
Creators
- 1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
- 2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Description
Two-dimensional transition metal dichalcogenides (TMDCs), such as and , received extensive attention owing to their diverse crystal structures and intriguing physical properties. In contrast, there has been relatively limited research on transition-metal dioxides (TMDOs) despite sharing the same crystal structures with TMDCs. Here, we investigate the structural and electronic properties of monolayer -phase and using first-principles calculations. Our analysis reveals that their phonon dispersions have prominent imaginary modes, leading to the emergence of two charge density wave phases: and . Interestingly, we find that and exhibit Dirac semimetal behavior, while their phases are ferroelectric semiconductors, with out-of-plane spontaneous polarization of 3.99 and 3.94 pC/m, respectively. This work sheds light on structural and electronic properties of -phase and , offering valuable insights for further experimental investigations into similar TMDOs materials.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.110.045447;
- Crossref Funder ID
- 10.13039/501100001809;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 110
- Journal Issue
- 4
- Journal Page Range
- 8 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE DENSITY; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL METHOD; DISPERSIONS; ELECTRICAL PROPERTIES; ELECTRON-PHONON COUPLING; FERROELECTRIC MATERIALS; MOLYBDENUM SULFIDES; PHONONS; PHYSICAL PROPERTIES; POLARIZATION; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TRANSITION ELEMENTS; TUNGSTEN OXIDES; TUNGSTEN SULFIDES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; COUPLING; DIELECTRIC MATERIALS; ELEMENTS; MATERIALS; METALS; MOLYBDENUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; QUASI PARTICLES; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- 52331008
- Notes
- Contact Email: Contact author: zhoujian@nju.edu.cn; Record automatically processed
- Funding organization
- National Natural Science Foundation of China