Published 1998 | Version v1
Miscellaneous Metadata-only

Structure and luminescence of heteroepitaxial GaN: the role of Mg-doping

Creators

  • 1. Institut fuer Werkstoffwissenschaften, Lehrstuhl VII, Universitaet Erlangen-Nuernberg, Erlangen (Germany)
  • 2. CNR-MASPEC Institute via Chiavari, Parma (Italy)
  • 3. Dept. of Optoelectronics, University of Ulm, Ulm (Germany)

Description

no abstract available

Part of:
Abstracts of The Third European GaN Workshop EGW-3

Additional details

Additional titles

Augmented title (English)
thin film

Publishing Information

Imprint Title
Abstracts of The Third European GaN Workshop EGW-3
Imprint Pagination
97 p.
Journal Page Range
p. 72

Conference

Title
3. European GaN Workshop EGW-3
Dates
22-24 Jun 1998
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31064582
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; DOPED MATERIALS; EMISSION SPECTRA; GALLIUM NITRIDES; MAGNESIUM ADDITIONS; MEETINGS; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ALLOYS; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MAGNESIUM ALLOYS; MATERIALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SPECTRA

Optional Information