Adaptation of an ion implanter on a 100 kV electron microscope for in situ irradiation experiments

An ion implanter with high mass resolution has been connected to a conventional electron microscope. Preliminary results on the evolution of defect clusters created by ions of 10-50 keV in Ni are given. The resolution achieved is better than 1.5 nm for irradiation temperatures above 90 K, using conventional holders. In the temperature range 20-100 K irradiation experiments are performed using a liquid-helium-cooled holder built in the laboratory. The resolution is then about 3 nm. (author)