Published 1992
| Version v1
Book
Surface acoustic wave detection of large lattice relaxation of metastable EL2 in LT-GaAs
Creators
- 1. California Univ., Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering
- 2. California Univ., Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
Description
This paper reports that for the first time, surface acoustic waves (SAWs) were used to study the lattice relaxation of metastable defects. A persistent increase of as much as 0.4% of the SAW velocity at low temperatures was observed after illumination of LT-GaAs; this increase could be quenched by annealing at 120-130 degrees K. This behavior is caused by the metastable transition of EL2-like AsGa defects and constitutes the direct experimental proof of the illumination induced large lattice relaxation of this defect
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-135-2
- Imprint Title
- Proceedings of low temperature (LT) GaAs and related materials
- Imprint Pagination
- 297 p.
- Journal Page Range
- p. 131-136.
Conference
- Title
- Annual fall meeting of the Materials Research Society.
- Dates
- 2-6 Dec 1991.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24010215
- Subject category
- S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; GALLIUM ARSENIDES; ION ACOUSTIC WAVES; METASTABLE STATES; PHOTOCHEMISTRY; SPIN-LATTICE RELAXATION; TEMPERATURE RANGE 0065-0273 K; VELOCITY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHEMISTRY; CRYSTAL STRUCTURE; ENERGY LEVELS; EXCITED STATES; GALLIUM COMPOUNDS; HEAT TREATMENTS; ION WAVES; PLASMA WAVES; PNICTIDES; RELAXATION; TEMPERATURE RANGE
Optional Information
- Secondary number(s)
- CONF-911202--.