SIMS/ARXPS - A New Technique of Retained Dopant Dose and Profile Measurement of Low Energy Doping Processes

A newly-developed surface analysis technique, which combines Secondary Ion Mass Spectrometry (SIMS) with Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS), was used to achieve more accurate results of the retained impurity doses and profiles for ultra-low energy implants, including conventional beam-line implant and plasma immersion ion implantation (PIII). Using this method, it has been found that the B2H6(Diborane) PIII demonstrates thicker native oxide and much more B dose loss during RTP and surface clean treatments than conventional beam-line ion implantation, due to the higher surface B concentration. In order to match the electrical parameters of the device, PIII must consider higher nominal dose to compensate the B loss.