Published 1980 | Version v1
Journal article Metadata-only

Ion bombardment enhanced mixing of silver layers on silicon

Creators

  • 1. Salford Univ. (UK). Dept. of Electrical Engineering

Description

Silver films evaporated onto silicon substrates were sputtered by 35 keV Ar+ ions at different fluences and the evolution of the Ag depth profile was monitored by means of high resolution Rutherford backscattering. Evidence for bombardment-induced intermixing was found. Radiation-enhanced diffusion does not appear to be a major mechanism but at this stage we cannot determine the precise nature of the dominating mechanism. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff. Lett.
Journal Volume
50
Journal Issue
2
Series
Radiat. Eff. Lett.
Journal Page Range
51-56
ISSN
0142-2448

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
11567043
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ARGON IONS; BACKSCATTERING; DEPTH; DIFFUSION; FILMS; KEV RANGE 10-100; MIXING; RUTHERFORD SCATTERING; SILICON; SILVER; SPATIAL DISTRIBUTION; SPUTTERING; SUBSTRATES
Descriptors DEC
CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; METALS; SCATTERING; SEMIMETALS; TRANSITION ELEMENTS