Published September 1998
| Version v1
Journal article
Metal-insulator transition in Si:X (X=P,B): Anomalous response to a magnetic field
Creators
- 1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
- 2. National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306 (United States)
- 3. Serin Physics Laboratory, Rutgers University, Piscataway, New Jersey 08854 (United States)
Description
The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field H and dopant concentration n lying on a single universal curve: σ(n,H)/σ(n,0)=G[H-δΔn] with a magnetic-field crossover exponent δ∼2. We note that Si:P, Si:B, and Si:As all have unusually large crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field, Δnc∝Hδ, is a common feature of uncompensated doped semiconductors. copyright 1998 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 58
- Journal Issue
- 11
- Journal Page Range
- p. 6692-6695
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30001629
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARSENIC ADDITIONS; BORON; BORON ADDITIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECT; MAGNETIC FIELDS; PHOSPHORUS; PHOSPHORUS ADDITIONS; SILICON
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; NONMETALS; PHYSICAL PROPERTIES; SEMIMETALS