Stochastic self-oscillations in a two-temperature electron-hole plasma in a semiconductor

The nonstationary states are studied of an electron-hole plasma generated and heated by an interband light absorption in a direct gap semiconductor. Account is taken of phonon and/or radiative as well as of interband impact recombination processes; adiabatic approximation ('slow recombination') is not employed. Explicit conditions are stated under which the system sustains regular (periodic) or stochastic self-oscillations of the concentration and temperature of the charge carriers. (author)