Published November 1993 | Version v1
Journal article Metadata-only

XPS study of laser-annealed ion-implanted GaAs

Creators

  • 1. Bylgarska Akademiya na Naukite, Sofia (Bulgaria). Inst. za Obshta i Organichna Khimiya
  • 2. Bylgarska Akademiya na Naukite, Sofia (Bulgaria). Inst. po Elektronika
  • 3. Bylgarska Akademiya na Naukite, Sofia (Bulgaria). Inst. po Fizika na Tvyrdoto Tyalo
  • 4. Rome Univ. 'La Sapienza' (Italy). Dept. of Energetics

Description

Data on the effects of 140 keV Zn+ implantation of (100)GaAs and the consequent low-power pulsed laser annealing (LPPLA) on the composition of the surface layers are presented. The implantation dose was 1014 cm-2 and the sample temperature was kept at 110 ± 10oC. The LPPLA was carried out by 10-30 pulses of a Q-switched ruby laser equipped with a spatial homogenizer. The crystal surface was studied by XPS analysis combined with depth profiling with the use of 1 keV Ar+. The results presented include the depth redistribution of oxygen and the As/Ga ratio as well as the oxide thickness for (a) virgin, (b) as-implanted and (c) implanted and then annealed samples. (author)

Additional details

Publishing Information

Journal Title
Surface and Interface Analysis
Journal Volume
20
Journal Issue
12
Journal Page Range
p. 955-958.
ISSN
0142-2421
CODEN
SIANDQ

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
25027318
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; DEPTH; ETCHING; GALLIUM ARSENIDES; ION IMPLANTATION; KEV RANGE 100-1000; LASER RADIATION; PHOTOELECTRON SPECTROSCOPY; SPATIAL DISTRIBUTION; ZINC IONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; KEV RANGE; PNICTIDES; RADIATIONS; SPECTROSCOPY