Published December 1, 1996
| Version v1
Journal article
Capacitance measurements of double-metal double-sided silicon microstrip detectors
Creators
- 1. Purdue Univ., Lafayette, IN (United States). Dept. of Physics
Description
Double-metal double-sided silicon microstrip prototype sensors have been developed by Sintef/SI, micron semi-conductor, and Hamamatsu photonics for the CDF silicon vertex detector upgrade, SVXII. The sensors are biased with polysilicon resistors and have integrated AC-coupling and p-stop isolation. We present measurements of the total capacitance, interstrip capacitance and overlap capacitance due to the double metal structure. The measurements are compared to a simple electrostatic model. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 383
- Journal Issue
- 1
- Journal Page Range
- p. 104-109.
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 2. international symposium on development and application of semiconductor tracking detectors (Hiroshima STD symposium).
- Dates
- 10-13 Oct 1995.
- Place
- Hiroshima (Japan).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 28022044
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; INTEGRATED CIRCUITS; LAYERS; METALS; POSITION SENSITIVE DETECTORS; RESISTORS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELEMENTS; EQUIPMENT; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS