Published August 31, 2005 | Version v1
Journal article

A nanowire magnetic memory cell based on a periodic magnetic superlattice

  • 1. Institute of Semiconductors of Chinese Academy of Sciences, 100083 (China)
  • 2. College of Electronic Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023 (China)
  • 3. Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260-1920 (United States)
  • 4. Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi, Inage-ku, Chiba 236-8522 (Japan)

Description

We analyse the operation of a semiconductor nanowire-based memory cell. Large changes in the nanowire conductance result when the magnetization of a periodic array of nanoscale magnetic gates, which comprise the other key component of the memory cell, is switched between distinct configurations by an external magnetic field. The resulting conductance change provides the basis for a robust memory effect, which can be implemented in a semiconductor structure compatible with conventional semiconductor integrated circuits

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/17/5263/cm5_34_011.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
17
Journal Issue
34
Journal Page Range
p. 5263-5268
ISSN
0953-8984
CODEN
JCOMEL