Published February 15, 2007
| Version v1
Journal article
Atomistic simulation of the vacancy in Ni (1 1 0) surface
Creators
- 1. College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, Shaanxi (China)
- 2. State-Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi (China)
Description
Both the formation energies and the intra- and inter-layer diffuse activation energies of a vacancy in the first six atomic planes of Ni (1 1 0) surface have been investigated by means of molecular dynamics (MD) in conjunction with the semi-experiential many-body potential of the modified analytical embedded-atom method (MAEAM). The results show that the effect of the surface is only down to the fifth-layer. It is easer for a vacancy in the first or second layer to form and to migrate in intra-layer. For the inter-layer migration, a vacancy in the second or third layer is favorable to migrate to the upper layer, this is not the case for a vacancy in the fourth or fifth layer
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2006.07.088;
- PII
- S0169-4332(06)01200-1;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 253
- Journal Issue
- 8
- Journal Page Range
- p. 3785-3788
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39003330
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; LAYERS; MANY-BODY PROBLEM; MIGRATION; MOLECULAR DYNAMICS METHOD; SIMULATION; SURFACES; VACANCIES
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY; POINT DEFECTS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.