Published February 15, 2007 | Version v1
Journal article

Atomistic simulation of the vacancy in Ni (1 1 0) surface

  • 1. College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, Shaanxi (China)
  • 2. State-Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi (China)

Description

Both the formation energies and the intra- and inter-layer diffuse activation energies of a vacancy in the first six atomic planes of Ni (1 1 0) surface have been investigated by means of molecular dynamics (MD) in conjunction with the semi-experiential many-body potential of the modified analytical embedded-atom method (MAEAM). The results show that the effect of the surface is only down to the fifth-layer. It is easer for a vacancy in the first or second layer to form and to migrate in intra-layer. For the inter-layer migration, a vacancy in the second or third layer is favorable to migrate to the upper layer, this is not the case for a vacancy in the fourth or fifth layer

Additional details

Identifiers

DOI
10.1016/j.apsusc.2006.07.088;
PII
S0169-4332(06)01200-1;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
253
Journal Issue
8
Journal Page Range
p. 3785-3788
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39003330
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACTIVATION ENERGY; LAYERS; MANY-BODY PROBLEM; MIGRATION; MOLECULAR DYNAMICS METHOD; SIMULATION; SURFACES; VACANCIES
Descriptors DEC
CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY; POINT DEFECTS

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.